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NTD85N02R Power MOSFET 85 Amps, 24 Volts N-Channel DPAK
Features
* * * * *
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VDSS 24 V RDS(ON) TYP 4.8 mW ID MAX 85 A
Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge
N-Channel D
MAXIMUM RATINGS (TJ = 25C Unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25C Drain Current Continuous @ TC = 25C, Limited by Package Continuous @ TA = 25C, Limited by Wires Single Pulse (tp 10 ms) Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 10 Vdc, IL = 13 Apk, L = 1 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 10 Seconds Symbol VDSS VGS RqJC PD ID ID IDM RqJA PD ID RqJA PD ID TJ, Tstg EAS Value 24 20 1.6 78.1 85 32 96 52 2.4 16 100 1.25 12 -55 to 150 85 Unit Vdc Vdc C/W W A A A C/W 12 W A C/W W A C mJ 1 TL 260 C 3 2 1 Gate 2 Drain 3 Source 4 Drain 3 DPAK CASE 369C STYLE2 S G
4
4 1
2
3
DPAK-3 CASE 369D STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENTS
4 YWW 85 N02 YWW 85 N02 1 2 3
4
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2).
Y = Year WW = Work Week 85N02R = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2004
1
September, 2004 - Rev. 6
Publication Order Number: NTD85N02R/D
NTD85N02R
ELECTRICAL CHARACTERISTICS (TJ = 25C Unless otherwise specified)
Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 4.5 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 20 Adc) Forward Transconductance (Note 3) (VDS = 10 Vdc, ID = 15 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VGS = 5 Vdc, ID = 10 Adc, VDS = 10 Vdc) (Note 3) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 10 Adc, VGS = 0 Vdc) ( (Note 3) ( ) (IS = 10 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. trr ta tb QRR VSD - - - - - - 0.78 0 63 0.63 37.5 16.8 20.7 0.027 1.0 - - - - - mC ns Vdc (VGS = 10 Vdc, VDD = 10 Vdc, ID = 30 Adc, RG = 3 W) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 6.3 77 25 12 17.7 2.6 7.1 - - - - - - - nC ns (VDS = 20 Vdc, VGS = 0 V, f = 1 MHz) Ciss Coss Crss - - - 2050 871 359 - - - pF VGS(th) 1.0 - RDS(on) - - gFS - 38 - 6.5 4.8 - 5.2 Mhos 1.5 4.0 2.0 - Vdc mV/C mW V(br)DSS 24 - IDSS - - IGSS - - - - 1.5 10 100 nAdc 28 20.5 - - Vdc mV/C mAdc Symbol Min Typ Max Unit
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NTD85N02R
160 10 V ID, DRAIN CURRENT (AMPS) 120
6V
3.8 V 3.6 V 3.4 V
ID, DRAIN CURRENT (AMPS)
4.4 V 5V
160 VGS = 4 V 120 VDS 10 V
80
3.2 V 3V
80 TJ = 25C 40 TJ = 125C 0 TJ = -55C 0 1 2 3 4 5 6
40
2.8 V 2.6 V 2.4 V
0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.018 VGS = 10 V 0.014
0.018 VGS = 4.5 V 0.014
0.010 TJ = 125C 0.006 TJ = 25C TJ = -55C 0.002 0 40 80 120 160 ID, DRAIN CURRENT (AMPS)
0.010
TJ = 125C TJ = 25C
0.006 TJ = -55C 0.002 0 40 80 120 160
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 0 ID = 40 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 100,000
Figure 4. On-Resistance versus Drain Current and Temperature
VGS = 0 V
TJ = 150C
1000
TJ = 125C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTD85N02R
POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load, VGS remains virtually constant at a level known as the plateau voltage, VSGP. Therefore, rise and fall times may be approximated by the following: tr = Q2 x RG/(VGG - VGSP) tf = Q2 x RG/VGSP where VGG = the gate drive voltage, which varies from zero to VGG RG = the gate drive resistance and Q2 and VGSP are read from the gate charge curve. During the turn-on and turn-off delay times, gate current is not constant. The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change in an RC network. The equations are: td(on) = RG Ciss In [VGG/(VGG - VGSP)] td(off) = RG Ciss In (VGG/VGSP) The capacitance (Ciss) is read from the capacitance curve at a voltage corresponding to the off-state condition when calculating td(on) and is read at a voltage corresponding to the on-state when calculating td(off). At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses.
4800 TJ = 25C 4000 C, CAPACITANCE (pF) 3200 2400 1600 Coss 800 0 10 VDS = 0 V VGS = 0 V 5 VGS 0 VDS 5 10 15 20 Crss Ciss Crss Ciss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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NTD85N02R
VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 6 QT VGS t, TIME (ns) 4 Q1 Q2 100 tr td(off) 10 ID = 10 A TJ = 25C 0 0 4 8 12 16 QG, TOTAL GATE CHARGE (nC) 20 1 1 10 RG, GATE RESISTANCE (OHMS) 100 tf td(on) VDS = 10 V ID = 40 A VGS = 10 V 1000
2
Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation versus Gate Resistance
DRAIN-TO-SOURCE DIODE CHARACTERISTICS
80 IS, SOURCE CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 TJ = 25C 0.8 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA The Forward Biased Safe Operating Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, "Transient Thermal Resistance - General Data and Its Use." Switching between the off-state and the on-state may traverse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not exceed 10 ms. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) - TC)/(RqJC). A Power MOSFET designated E-FET can be safely used in switching circuits with unclamped inductive loads. For reliable operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non-linearly with an increase of peak current in avalanche and peak junction temperature. Although many E-FETs can withstand the stress of drain-to-source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous current (ID), in accordance with industry custom. The energy rating must be derated for temperature as shown in the accompanying graph (Figure 12). Maximum energy at currents below rated continuous ID can safely be assumed to equal the values indicated.
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NTD85N02R
SAFE OPERATING AREA
100 I D, DRAIN CURRENT (AMPS) 10 ms
10
VGS = 20 V SINGLE PULSE TC = 25C
100 ms
1 ms 10 ms
RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.1
dc
1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
Figure 11. Maximum Rated Forward Biased Safe Operating Area
10 EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Normalized to RqJC at Steady State
1
0.1
r(t),
0.01 0.00001
0.0001
0.001
0.01 t, TIME (s)
0.1
1
10
Figure 12. Thermal Response
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NTD85N02R
10 EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED)
r(t),
Normalized to RqJA at Steady State, 1 square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board
1
0.1
0.01 0.00001
0.0001
0.001
0.01
0.1 t, TIME (s)
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device NTD85N02R NTD85N02RG NTD85N02R-001 NTD85N02R-1G NTD85N02RT4 NTD85N02RT4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) 75 Units / Rail Shipping
800 Tape & Reel 800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTD85N02R
PACKAGE DIMENSIONS
DPAK CASE 369C ISSUE O
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
SEATING PLANE
C E
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005)
M
T
DIM A B C D E F G H J K L R S U V Z
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
SOLDERING FOOTPRINT*
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118
SCALE 3:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD85N02R
PACKAGE DIMENSIONS
DPAK-3 CASE 369D-01 ISSUE B
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 ---
Z A
3
S -T-
SEATING PLANE
1
2
K
F D G
3 PL
J H 0.13 (0.005)
M
DIM A B C D E F G H J K R S V Z
T
STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN
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NTD85N02R
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTD85N02R/D

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